(Invited) Modelling and Simulation of Advanced Semiconductor Devices

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Behavioral Modeling and Simulation of Semiconductor Devices and Circuits Using VHDL-AMS

During the past few years, a lot of work has been done on behavioral models and simulation tools. But a need for modeling strategy still remains. The VHDL-AMS language supports the description of analog electronic circuits using Ordinary Differential Algebraic Equations (ODAEs), in addition to its support for describing discrete-event systems. For VHDL-AMS to be useful to the analog design ...

متن کامل

Three - dimensional Process Simulation for Advanced Silicon Semiconductor Devices

The fabrication of advanced semiconductor dev·ices makes heavy demands on the simulation. The main directions for ongoing research are on the one hand the extension of the simulation tools to three spatial dimensions and on the other hand the development of more sophisticated physical models.

متن کامل

Modeling of Advanced Semiconductor Devices

Aggressive downscaling of modern semiconductor devices forces development engineers to question the validity of existing modeling approaches. Models for carrier transport have to be considered which are applicable on the transition into the quantum regime. An overview of semiclassical current transport models and their enhancements used for the simulation of nanoelectronic devices is given. Emp...

متن کامل

Numerical Simulation of Semiconductor Devices

The state of the art in self-consistent numerical modeling of semiconductor devices is reviewed. The physical assumptions which are required to describe carrier transport are discussed. Particular emphasis is put on the models for space charge, carrier mobility, carrier temperature, and carrier generationrecombination. Investigations about three-dimensional effects due to the field oxide in MOS...

متن کامل

Simulation of hot carriers in semiconductor devices

Two approaches to calculate the population of hot carriers in semiconductor devices are studied in this thesis. Hot carriers are of interest because they have an energy significantly higher than the mean carrier energy and can thus cause device degradation by injection into the oxide and by interface state generation. In the first approach the hydrodynamic model was used to calculate the first ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: ECS Transactions

سال: 2017

ISSN: 1938-6737,1938-5862

DOI: 10.1149/08004.0033ecst